The bond wires aging monitoring of the insulated-gate bipolar transistor (IGBT) becomes attractive. However, the performance of the conventional monitoring methods may be adversely affected by junction temperature variations. To address this, in this digest, a novel bond wires aging monitoring method of the IGBT is proposed for traction rectifier in high-speed train applications. In this method, under off-line conditions, short-circuit currents are first collected at various junction temperatures and bond wires shedding degree under the specific driving voltage, and they are used as a reference data set. Afterward, a performance comparison between the short-circuit current calculated by the reference data set and the measured short-circuit current is made. With this, the task of bond wires aging monitoring is accomplished. Compared to the conventional methods, the proposed method can effectively mitigate the effects of junction temperature variations. Simulations are carried out to verify the effectiveness of the proposed method.

Insulated gate bipolar transistor (IGBT), condition monitoring, short-circuit current, junction temperature