A New V-groove Trench SiC-MOSFET and an Improved Circuit Pattern for a Low-Los High-Power Single-Ended Wireless EV Charger
ID：252
Submission ID：157 View Protection：ATTENDEE
Updated Time：2021-12-03 10:53:10 Hits：547
Poster Presentation
Start Time：2021-12-17 14:40 （Asia/Shanghai）
Duration：5min
Session：[Z] Poster Session » [Z5] Poster Session 5: Wireless power transfer technology
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Abstract
In this paper, we propose a new SiC-VMOSFET single-ended converter that realizes a low-cost, compact and lightweight wireless EV charger, which is the key device for the popularization of electric vehicles in recent years. A three-fold transfer power and 1/6 power device loss have been achieved by an improved drive pattern, a newly developed V-groove trench SiC-MOSFET, and a new type of low switching loss circuit topology.
In this paper, we propose a new SiC-VMOSFET single-ended converter that realizes a low-cost, compact and lightweight wireless EV charger, which is the key device for the popularization of electric vehicles in recent years. A three-fold transfer power and 1/6 power device loss have been achieved by an improved drive pattern, a newly developed V-groove trench SiC-MOSFET, and a new type of low switching loss circuit topology.
In this paper, we propose a new SiC-VMOSFET single-ended converter that realizes a low-cost, compact and lightweight wireless EV charger, which is the key device for the popularization of electric vehicles in recent years. A three-fold transfer power and 1/6 power device loss have been achieved by an improved drive pattern, a newly developed V-groove trench SiC-MOSFET, and a new type of low switching loss circuit topology.
Keywords
Single-Ended,SiC,Electric Vehicle,Wireless Power Transfer,Charger,V-groove trench
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